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rf design engineer

Szczegóły oferty nr: 0523/2011
HAYS Poland
HAYS Poland jest firmą doradztwa personalnego, należącą do międzynarodowej, notowanej na giełdzie w Londynie, grupy Hays plc i największej na świecie firmy zajmującej się rekrutacją specjalistyczną. HAYS Poland specjalizuje się przede wszystkim w selekcji oraz rekrutacji specjalistycznej, executive search, Recruitment Process Outsourcing oraz marketingu rekrutacyjnym. Świadczymy usługi w sektorach prywatnym i publicznym, realizując projekty do pracy stałej, tymczasowej oraz na kontrakt. Obecnie poszukujemy kandydata na stanowisko:
Branża: IT
Rodzaj pracy: praca za granicą
Stanowisko: rf design engineer
Wakatów: 1
Miejsce pracy: Nijmegen, Netherlands
Wymagania: For our top client NXP Semiconductor we search for a RF Design Engineer. NXP Semiconductors provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise. These innovations are used in a wide range of automotive, identification, wireless infrastructure, lighting, industrial, mobile, consumer and computing applications. Headquartered in Europe, the company has approximately 28,000 employees working in more than 25 countries and posted sales of USD 3.8 billion in 2009. Skills:
  • bachelor’s degree with min. 5 year’s of experience in RF electronic engineering or master’s degree in Electronics with min. 3 year’s of experience in RF electronic engineering;
  • experience with RF simulation tools like ADS, Sonnet, HFSS, Cadence and preferably thermal simulation tools like Ansys;
  • familiar with RF measurements and measurement techniques; like power sweep, load-pull, intermodulation distortion;
  • basic knowledge of digital modulation techniques (GSM, W-CDMA etc);
  • good communication skills, both verbal and written in English.
Obowiązki: Development of the relevant RF products and/or modules, in line with the relevant specifications. Per project the Senior Design Engineer must be able to play a leading role in the specification, design and validation phases, supporting and advising the development team and third parties (subcontractors, customers etc.) with respect to the development of packaged RF power transistor or modules. He has sufficient broad knowledge to be able to co-operate with all other competencies within the project team. Tasks are: 1. Design and transfer into production of packaged RF power transistor or modules in LDMOS or GaN technology: 2. Device validation and characterisation: 3. Tooling and Flows:
  • to fulfil the mentioned tasks adequate;
  • responsible for the design, realization and test of a packaged RF power transistor or module; understands and communicates consequences of his/her design on the architecture;
  • designs on the basis of design specifications in accordance with the functional specifications;
  • draws up personal schedule and reports on progress;
  • is responsible for input in the planning process;
  • ensures that there is proper documentation for the developed hardware/software
  • solves PRs and CRs (Problem Reports and Change Requests);
  • performs work in line with the processes that have been agreed in the department;
  • constructive contribution to project team and department;
  • keeps abreast.
 
Sposób aplikowania: To apply for this position send your application via email to bankowska@hays.pl.CV+LM
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